# Photovoltage Effects in Photoemission from Thin GaAs Layers

Source: [Photovoltage Effects in Photoemission from Thin GaAs Layers](<https://www.sota2.com/research/paper/68fa25492c2a3760193aec17>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T10:37:51.915Z

Authors: G.A. Mulhollan, A.V. Subashiev, J.E. Clendenin, E.L. Garwin, R.E. Kirby, T. Maruyama, R. Prepost

Published: 2001-03-23T23:32:30.000Z

## Abstract

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\\times10^{18} cm^{-3} to 5\\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0103500>)

[PDF](<https://arxiv.org/pdf/cond-mat/0103500.pdf>)