# Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Source: [Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique](<https://www.sota2.com/research/paper/68fa24fc2c2a3760193ab531>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T10:03:10.876Z

Authors: Toshimasa Fujisawa, Yoshiro Hirayama

Published: 2000-06-01T09:45:27.000Z

## Abstract

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf-SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current (~0.1pA).

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0006008>)

[PDF](<https://arxiv.org/pdf/cond-mat/0006008.pdf>)