# Step edge barriers on GaAs(001)

Source: [Step edge barriers on GaAs(001)](<https://www.sota2.com/research/paper/68fa24082c2a37601939e43a>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T07:52:29.029Z

Authors: Pavel \\v{S}milauer, Dimitri D. Vvedensky

Published: 1993-11-29T10:15:06.000Z

## Abstract

We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/9311061>)

[PDF](<https://arxiv.org/pdf/cond-mat/9311061.pdf>)