# Thermalization process of a photo-generated plasma in semiconductors

Source: [Thermalization process of a photo-generated plasma in semiconductors](<https://www.sota2.com/research/paper/68fa21f67a2b558e29339bc9>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:52:19.542Z

Authors: M.A. Rodriguez-Meza, J.L. Carrillo

Published: 2008-11-01T19:05:26.000Z

## Abstract

The kinetics of ultra-fast processes which leads to the thermalization condition of a photo-excited plasma in semiconductor systems is studied theoretically. We analyze the time evolution of a carrier population generated by a finite optical pulse, from the beginning of the pulse until the time in which the carrier population reaches a quasi-equilibrium condition. We calculate the energy fluxes caused by the main interaction mechanisms along the different stages the system passes through. Our analysis is done by using a set of non-linear rate equations which govern the time evolution of the carrier population in the energy space. We consider the main interaction mechanisms, including dynamic screening and phonon population effects.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/0811.0108>)

[PDF](<https://arxiv.org/pdf/0811.0108.pdf>)