# High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Source: [High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes](<https://www.sota2.com/research/paper/68fa21b97a2b558e29338bfd>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:52:16.975Z

Authors: K. Shibata, K. Hirakawa

Published: 2008-08-19T06:09:33.000Z

## Abstract

We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/0808.2535>)

[PDF](<https://arxiv.org/pdf/0808.2535.pdf>)