# Photochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation

Source: [Photochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation](<https://www.sota2.com/research/paper/68fa20b47a2b558e29332c2f>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-23T22:51:14.292Z

Authors: F. Messina, M. Cannas

Published: 2007-03-02T13:57:06.000Z

## Abstract

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO\_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0703061>)

[PDF](<https://arxiv.org/pdf/cond-mat/0703061.pdf>)