# Metallic Carbon Nanotubes as High-Current-Gain Transistors

Source: [Metallic Carbon Nanotubes as High-Current-Gain Transistors](<https://www.sota2.com/research/paper/68fa20427a2b558e2932fc1e>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-23T21:24:12.578Z

Authors: F.Green, D. Neilson

Published: 2006-02-01T21:55:23.000Z

## Abstract

Low-dimensional metallic transport is at the heart of modern high-performance transistors. While the best devices are currently based on III-V heterojunction quantum-well channels, we demonstrate that much greater performance gains reside in the unique properties of one-dimensional carbon nanotubes. Using recent experimental data, we show how the specific features of degenerate carrier kinetics in metallic nanotubes enable a novel class of quantum-confined signal detector whose current gain exceeds present transistor technology. We analyze the key interplay of degeneracy and scattering dynamics on the transconductance via a microscopically conserving quantum-kinetic description.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0602034>)

[PDF](<https://arxiv.org/pdf/cond-mat/0602034.pdf>)